Mid-infrared InAs/GaInSb separate confinement heterostructure laser diode structures
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Abstract
Despite recent progress in electronic structure engineering of type-II materials for mid-infrared lasers, suppression of Auger recombination at room temperature has been limited. We present an active region design, consisting of AlAsSb/InAs/GaInSb/InAs/AlAsSb wells separated by an InAs/AlGaSb superlattice, that overcomes this limitation. The 300 K calculated Auger recombination rate in this structure at the optimal lasing density is five times smaller than typical Shockley-Read-Hall (defect-assisted) recombination rates. An integrated separate confinement heterostructure design suitable for this active region is also described. The separate confinement region, which is a lightly doped InAs/AlGaSb superlattice, provides efficient hole transport and injection into the active region. For an estimated nonactive region modal cavity loss of 20 cm-1 and an optical mode width of 1.3 μm, the calculated internal threshold current density is 100 A/cm2 at 300 K for a single quantum well device. © 2001 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Mid-infrared InAs/GaInSb separate confinement heterostructure laser diode structures</title><author><name sortKey="Olesberg, J T" uniqKey="Olesberg J">J. T. Olesberg</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy and the Optical Science and Technology Center, University of Iowa, Iowa City, Iowa 52242</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Iowa</region></placeName><wicri:cityArea>Department of Physics and Astronomy and the Optical Science and Technology Center, University of Iowa, Iowa City</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Department of Physics, University of Illinois at Chicago, Chicago</wicri:cityArea></affiliation></author><author><name sortKey="Flatte, Michael E" uniqKey="Flatte M">Michael E. Flatte</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy and the Optical Science and Technology Center, University of Iowa, Iowa City, Iowa 52242</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Iowa</region></placeName><wicri:cityArea>Department of Physics and Astronomy and the Optical Science and Technology Center, University of Iowa, Iowa City</wicri:cityArea></affiliation></author><author><name sortKey="Hasenberg, T C" uniqKey="Hasenberg T">T. C. Hasenberg</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy and the Optical Science and Technology Center, University of Iowa, Iowa City, Iowa 52242</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Iowa</region></placeName><wicri:cityArea>Department of Physics and Astronomy and the Optical Science and Technology Center, University of Iowa, Iowa City</wicri:cityArea></affiliation></author><author><name sortKey="Grein, C H" uniqKey="Grein C">C. H. Grein</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy and the Optical Science and Technology Center, University of Iowa, Iowa City, Iowa 52242</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Iowa</region></placeName><wicri:cityArea>Department of Physics and Astronomy and the Optical Science and Technology Center, University of Iowa, Iowa City</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0111853</idno><date when="2001-03-15">2001-03-15</date><idno type="stanalyst">PASCAL 01-0111853 AIP</idno><idno type="RBID">Pascal:01-0111853</idno><idno type="wicri:Area/Main/Corpus">011A37</idno><idno type="wicri:Area/Main/Repository">010363</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Auger effect</term><term>Band structure</term><term>Electron-hole recombination</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Interface states</term><term>Quantum well lasers</term><term>Semiconductor quantum wells</term><term>Semiconductor superlattices</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>4255P</term><term>4260B</term><term>7321F</term><term>7363H</term><term>7867D</term><term>7350G</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Effet Auger</term><term>Recombinaison électron trou</term><term>Puits quantique semiconducteur</term><term>Laser puits quantique</term><term>Superréseau semiconducteur</term><term>Structure bande</term><term>Etat interface</term><term>Aluminium composé</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Despite recent progress in electronic structure engineering of type-II materials for mid-infrared lasers, suppression of Auger recombination at room temperature has been limited. We present an active region design, consisting of AlAsSb/InAs/GaInSb/InAs/AlAsSb wells separated by an InAs/AlGaSb superlattice, that overcomes this limitation. The 300 K calculated Auger recombination rate in this structure at the optimal lasing density is five times smaller than typical Shockley-Read-Hall (defect-assisted) recombination rates. An integrated separate confinement heterostructure design suitable for this active region is also described. The separate confinement region, which is a lightly doped InAs/AlGaSb superlattice, provides efficient hole transport and injection into the active region. For an estimated nonactive region modal cavity loss of 20 cm-1 and an optical mode width of 1.3 μm, the calculated internal threshold current density is 100 A/cm2 at 300 K for a single quantum well device. © 2001 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>89</s2></fA05><fA06><s2>6</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Mid-infrared InAs/GaInSb separate confinement heterostructure laser diode structures</s1></fA08><fA11 i1="01" i2="1"><s1>OLESBERG (J. T.)</s1></fA11><fA11 i1="02" i2="1"><s1>FLATTE (Michael E.)</s1></fA11><fA11 i1="03" i2="1"><s1>HASENBERG (T. C.)</s1></fA11><fA11 i1="04" i2="1"><s1>GREIN (C. H.)</s1></fA11><fA14 i1="01"><s1>Department of Physics and Astronomy and the Optical Science and Technology Center, University of Iowa, Iowa City, Iowa 52242</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607</s1></fA14><fA20><s1>3283-3289</s1></fA20><fA21><s1>2001-03-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>01-0111853</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Despite recent progress in electronic structure engineering of type-II materials for mid-infrared lasers, suppression of Auger recombination at room temperature has been limited. 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